Description

The G15N60 is a fast IGBT in NPT-technology. The G15N60 IS 75% lower Eoff compared to previous generation combined with low conduction losses. The G15N60 has VCE of 600V, IC of 15A, VEC(sat) of 2.3V, and Tj of 150 degree. It is designed for :

1.Motor controls

2. Inverter.

Features:-

• Short circuit withstand time – 10 µs

• NPT-Technology for 600V applications offers:

– very tight parameter distribution

– high ruggedness, temperature stable behaviour

– parallel switching capability

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

Specification:-

Symbol	Description	Ratings	Units
VCE	Collector-emitter voltage	600	V
IC	DC collector curren	15	A
Tj	Operating junction	150	°C
Ts	Soldering temperature	260	°C
Tstg	Storage temperature	-55	°C
Ptot	Power dissipation	139	W
tsc	Short circuit withstand time	10	µs
VG E	Gate-emitter voltage	±20	V