Third generation power MOSFETs from  the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed

Third generation Power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Insulated  Gate  Bipolar  Transistors  (IGBTs)  from  International  Rectifier  have higher  usable  current  densities  than  comparable  bipolar  transistors,  while  at the 

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize

2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low

2SK2225 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching

K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology