25TTS12 – 1200V – 25A SCR – Thyristor
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Description
The 25TTS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. This product has been designed and qualified for industrial level.
Specifications:-
| Symbol | Parameter | Values | Units | |
| Type | Max | |||
| IT(AV) | Maximum average on-state current | 16 | A | |
| IRMS | Maximum RMS on-state current | 25 | ||
| ITSM | Maximum peak, one-cycle, non-repetitive surge current |
|||
| 10 ms sine pulse, rated VRRM applied | 300 | |||
| I2t | Maximum I2t for fusing | A2s | ||
| 10 ms sine pulse, rated VRRM applied | 450 | |||
| I2√t | Maximum I2√t for fusing | 6300 | A2√s | |
| VTM | Maximum on-state voltage drop | 1.25 | V | |
| rt | On-state slope resistance | 12 | mΩ | |
| VT(TO) | Threshold voltage | 1 | V | |
| IRM/IDM | Maximum reverse and direct leakage current | m A | ||
| TJ = 25 °C | 0.5 | |||
| TJ = 125 °C | 10 | |||
| IH | Holding current | 100 | ||
| IL | Maximum latching current | 200 | ||
| dV/dt | Maximum rate of rise of off-state voltage | 500 | V/µs | |
| dI/dt | Maximum rate of rise of turned-on current | 150 | A/µs | |
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